 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9575-100A BUK9675-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 100 23 99 175 75 55 UNIT V A W C m m PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain 2 mb tab PIN CONFIGURATION SYMBOL d g 3 SOT404 BUK9675-100A source 1 tab/mb drain 123 TO220AB BUK9575-100A s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 100 100 15 23 16 91 98 175 UNIT V V V A A A W C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) CONDITIONS in free air Minimum footprint, FR4 board TYP. 60 50 MAX. 1.5 UNIT K/W K/W K/W October 2000 1 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET STATIC CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VDS = 100 V; VGS = 0 V; VGS = 10 V; VDS = 0 V VGS = 5 V; ID = 10 A VGS = 10 V; ID = 10 A VGS = 4.5 V; ID = 10 A Tj = 175C Tj = 175C MIN. 100 89 1 0.5 - BUK9575-100A BUK9675-100A TYP. 1.5 0.05 2 60 55 61 MAX. 2.0 2.3 10 500 100 75 188 72 84 UNIT V V V V V A A nA m m m m DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ld Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 1278 129 88 13 120 58 57 4.5 3.5 2.5 7.5 MAX. 1704 155 120 20 168 87 86 UNIT pF pF pF ns ns ns ns nH nH nH nH VDD = 30 V; Rload =1.2; VGS = 5 V; RG = 10 Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 10 A; VGS = 0 V IF = 23 A; VGS = 0 V IF = 23 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 63 0.22 MAX. 23 92 1.2 UNIT A A V V ns C October 2000 2 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET AVALANCHE LIMITING VALUE SYMBOL W 1 DSS BUK9575-100A BUK9675-100A PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 14.2 A; VDD 25 V; VGS = 5 V; RGS = 50 ; Tmb = 25 C MIN. - TYP. - MAX. 100 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 100 RDS(ON)=VDS/ID ID/A tp = 1us 10us 10 100us DC 1ms 10ms 0 20 40 60 80 100 Tmb / C 120 140 160 180 1 1 10 100 1000 VDS/V Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp 120 110 100 90 80 70 60 50 40 30 20 10 0 Zth/(K/W) 10 1 0.5 0.2 0.1 0.05 0.02 0 0.1 0.01 1E-07 0 20 40 60 80 100 Tmb / C 120 140 160 180 1E-05 t/s 1E-03 1E-01 1E+01 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 1 For maximum permissible repetitive avalanche current see fig.18. October 2000 3 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9575-100A BUK9675-100A 60 ID/A 50 40 30 20 5.0 VGS/V = 10.0 RDS(ON) Ohm 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 75 70 65 60 55 50 10 0 0 2 4 VDS/V 6 8 2.4 2.2 10 3 4 5 6 7 VGS/V 8 9 10 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS Fig.8. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(VGS); conditions: ID = 25 A; RDS(ON)/mOhm 140 130 120 110 100 90 80 70 60 50 40 10 15 20 4.0 25 4.2 ID/A 20 4.4 4.6 4.8 5.0 15 10 Tj/C= 175 25 5 0 25 ID/A 30 35 40 0.0 1.0 2.0 VGS/V 3.0 4.0 Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(VGS); conditions: ID = 25 A; Fig.9. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 75 40 gfs/S RDS(ON) Ohm 70 65 20 30 60 10 55 50 3 4 5 6 7 VGS/V 8 9 10 0 0 10 20 ID/A 30 40 50 60 Fig.7. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(VGS); conditions: ID = 25 A; Fig.10. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V October 2000 4 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9575-100A BUK9675-100A 3 a Rds(on) normalised to 25degC 3.0 2.5 2.5 Capacitance / nF 2 2.0 1.5 Ciss 1.0 0.5 0.0 0.01 Coss Crss 0.1 1 VDS/V 10 100 1.5 1 0.5 -100 -50 0 50 100 Tmb / degC 150 200 Fig.11. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(TO) / V max. 2 typ. 1.5 min. 1 Fig.14. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 2.5 5 VGS / V 4 VDS = 14V VDS = 44V 3 2 1 0.5 0 0 -100 -50 0 50 Tj / C 100 150 200 0 5 10 QG / nC 15 20 25 Fig.12. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction Fig.15. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 25 A; parameter VDS 1E-01 40 IF/A 1E-02 2% typ 98% 30 Tj/C= 150 20 25 1E-03 1E-04 10 1E-05 0 1E-05 0.0 0.2 0.4 0 0.5 1 1.5 2 2.5 3 0.6 0.8 VSDS/V 1.0 1.2 1.4 Fig.13. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS Fig.16. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj October 2000 5 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9575-100A BUK9675-100A 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% 100 IAV 25C 25C 10 Tj prior to avanche 150C Tj prior to avalanche 150C 1 0.001 20 40 60 80 100 120 Tmb / C 140 160 180 0.01 0.1 1 10 Avalanche Time, tAV (ms) Fig.17. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A Fig.19. Maximum permissible repetitive avalanche current(IAV) versus avalanche time(tAV) for unclamped inductive loads. + L VDS VGS 0 RGS T.U.T. VDD + RD VDS -ID/100 VDD VGS 0 R 01 shunt RG T.U.T. Fig.18. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) Fig.20. Switching test circuit. October 2000 6 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET MECHANICAL DATA Dimensions in mm Net Mass: 2 g BUK9575-100A BUK9675-100A 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.21. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". October 2000 7 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) BUK9575-100A BUK9675-100A SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Fig.22. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". October 2000 8 Rev 1.200 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET MOUNTING INSTRUCTIONS Dimensions in mm 11.5 BUK9575-100A BUK9675-100A 9.0 17.5 2.0 3.8 5.08 Fig.23. SOT404 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 2000 9 Rev 1.200 |
Price & Availability of BUK9675-100A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |